DocumentCode :
3851278
Title :
Radiation effects on breakdown characteristics of multiguarded devices
Author :
M. Da Rold;A. Paccagnella;A. Da Re;G. Verzellesi;N. Bacchetta;R. Wheadon;G.-F. Dalla Betta;A. Candelori;G. Soncini;D. Bisello
Author_Institution :
Dipt. di Fisica, Padova Univ., Italy
Volume :
44
Issue :
3
fYear :
1997
Firstpage :
721
Lastpage :
727
Abstract :
Multiguard structures are used in order to enhance the breakdown voltage of microstrip detectors. In this work we studied the electrical properties of devices designed in four different layouts on n-Si substrates, based on a central diode surrounded by various p/sup +/ and/or n/sup +/ floating rings. In particular we measured the main DC characteristics and we compared the experimental results with those simulated by a two-dimensional drift-diffusion computer model. Device noise was also measured for the central diode as a function of the applied voltage. We repeated all measurements after neutron and gamma irradiation, in view of the application of these devices to silicon microstrip detectors for future high energy physics experiments. For example at the LHC the level of radiation damage expected during the detector lifetime implies very high bias voltages for the detector operation. Multiguards can offer a solution, provided the optimisation of the design takes into account the radiation effects.
Keywords :
"Radiation effects","Electric breakdown","Microstrip","Diodes","Voltage","Radiation detectors","Particle measurements","Computational modeling","Computer simulation","Noise measurement"
Journal_Title :
IEEE Transactions on Nuclear Science
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.603740
Filename :
603740
Link To Document :
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