• DocumentCode
    3851392
  • Title

    Current self-distribution effect in diode lasers: analytic criterion and numerical study

  • Author

    P.G. Eliseev;A.G. Glebov;M. Osinski

  • Author_Institution
    Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
  • Volume
    3
  • Issue
    2
  • fYear
    1997
  • Firstpage
    499
  • Lastpage
    506
  • Abstract
    We consider a current self-distribution (current crowding) effect that can be induced by stimulated recombination in diode lasers. In particular, we identify conditions when the injection current density can be sensitive to inhomogeneities of carrier recombination rate. In response to a locally enhanced carrier consumption, the current injection becomes itself inhomogeneous. An analytic criterion is proposed to predict when this effect can lead to suppression of spatial hole-burning, providing improved laser mode stability and spatial stability of the laser beam. Adequacy of the proposed analytic approach is verified by numerical modeling.
  • Keywords
    "Diode lasers","Laser stability","Laser modes","Charge carrier density","Radiative recombination","Current density","Semiconductor lasers","Stability analysis","Voltage","Charge carrier lifetime"
  • Journal_Title
    IEEE Journal of Selected Topics in Quantum Electronics
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/2944.605700
  • Filename
    605700