New contributions to compound semiconductor technology for RF MEMS applications

Author

Hartnagel, Hans L. ; Mutamba, K.

Author_Institution

Inst. fuer Hochfrequenztechnik, Tech. Univ. Darmstadt, Germany

Volume

1

fYear

2002

fDate

2002

Firstpage

9

Abstract

This work deals with contributions related to the use of micromachining technologies in the development of RF MEMS devices. Recent device developments involving III-V compound semiconductor MEMS technology are presented in connection with RF power measurement and the prospects of microwave power generation on the basis of micromachined lateral field-emitters.

Keywords

Gunn devices; III-V semiconductors; electric sensing devices; electron field emission; micromachining; microsensors; microwave devices; power measurement; semiconductor technology; GaAs; III-V compound semiconductor MEMS technology; RF MEMS applications; RF MEMS devices; RF power measurement; compound semiconductor technology; device developments; micromachined RF power sensors; micromachined lateral Gunn-emitters; micromachined lateral field-emitters; micromachining; microwave power generation; Etching; Frequency; Micromachining; Micromechanical devices; Millimeter wave technology; Monolithic integrated circuits; Optical filters; Optical resonators; Optical sensors; Radiofrequency microelectromechanical systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105790

Filename

1105790