Title :
Micromachined hybrid integrated receiver modules for 38 GHz and 77 GHz, on silicon substrate, technology and manufacturing
Author :
Petrini, Ioana ; Giacomozzi, F. ; Neculoiu, D. ; Vasilache, D. ; Buiculescu, C. ; Muller, A.
Author_Institution :
IMT-Bucharest, Bucharest, Romania
Abstract :
This paper present the fabrication process for the manufacturing of hybrid integrated receiver modules for 38 GHz and 77 GHz operating frequency, on micromachined silicon substrate. The hybrid receiver structures consist of a membrane-supported antenna, a GaAs Schottky detector diode, a matching network and a low-pass filter on a bulk material area of the chip. The technological process and the manufacturing characteristics are presented. AFM, SEM, and white light interferometry have been used for microphysical characterization.
Keywords :
Schottky diodes; atomic force microscopy; elemental semiconductors; hybrid integrated circuits; impedance matching; integrated circuit measurement; light interferometry; low-pass filters; membranes; micromachining; millimetre wave antennas; millimetre wave diodes; millimetre wave filters; millimetre wave integrated circuits; millimetre wave receivers; scanning electron microscopy; silicon; 38 GHz; 77 GHz; AFM; GaAs; GaAs Schottky detector diode; SEM; Si; SiO2-Si3N4-SiO2; SiO2/Si3N4/SiO2 membrane; bulk material area; fabrication process; hybrid receiver structures; low-pass filter; matching network; membrane-supported antenna; micromachined hybrid integrated receiver modules; micromachined silicon substrate; microphysical characterization; operating frequency; receiver manufacturing; receiver technology; silicon substrate; white light interferometry; Detectors; Fabrication; Frequency; Gallium arsenide; Low pass filters; Manufacturing processes; Pulp manufacturing; Receiving antennas; Schottky diodes; Silicon;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105794
