Micromachined magnetostatic wave band-stop resonator

Author

Sajin, George ; Craciunoiu, Florea ; Marcelli, Romolo ; Cismaru, Alina

Author_Institution

Nat. Res. & Dev. Inst. for Microtechnologies, Bucharest, Romania

Volume

1

fYear

2002

fDate

2002

Firstpage

37

Abstract

A band-stop resonator on silicon wafer with a micromachined silicon membrane is presented in this paper. As a selective frequency component, a frequency tunable magnetostatic wave (MSW) straight edge resonator (SER), made of a YIG film, has been used. Frequency tunability ranged between 4.5 GHz-7.5 GHz for different DC magnetic biasing fields. The maximum measured attenuation for a bulk silicon supported resonator in this frequency domain was -25 dB at 5.5 GHz. For a membrane supported resonator, the maximum measured attenuation was -42 dB at 5.63 GHz, for sample #1 SER, and -36 dB at 5.34 GHz for sample #2 SER.

Keywords

magnetostatic wave devices; membranes; micromachining; micromechanical resonators; microstrip resonators; tuning; 4.5 to 7.5 GHz; 5.34 GHz; 5.5 GHz; 5.63 GHz; DC magnetic biasing fields; Si; YFe5O12; YIG; YIG film MSW SER; bulk silicon supported resonators; frequency tunability range; frequency tunable magnetostatic wave straight edge resonators; maximum resonator attenuation; membrane supported resonators; micromachined magnetostatic wave band-stop resonators; micromachined silicon membranes; microstrip lines; selective frequency components; silicon wafers; Anisotropic magnetoresistance; Biomembranes; Etching; Magnetostatic waves; Microstrip; Optical resonators; Resists; Silicon; Substrates; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105796

Filename

1105796