DocumentCode :
385251
Title :
Traps in (nc-Si/CaF2)50 nanostructures
Author :
Draghici, M. ; Jdira, L. ; Iancu, V. ; Ioannou-Sougleridis, V. ; Nassiopoulou, A. ; Ciurea, M.L.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest, Romania
Volume :
1
fYear :
2002
fDate :
2002
Firstpage :
119
Abstract :
Traps in multi-quantum well (nc-Si/CaF2)50 nanostructures using optical charging spectroscopy method were investigated. Three maxima and a final abrupt increase were found in the discharge current versus temperature characteristics. The relative contributions of the tunneling and displacement currents through the insulating calcium fluoride were analyzed.
Keywords :
calcium compounds; electron traps; elemental semiconductors; hole traps; nanostructured materials; semiconductor quantum wells; semiconductor superlattices; silicon; tunnelling; visible spectroscopy; MQW nanocrystalline superlattices; Si-CaF2; discharge current maxima; discharge current/temperature characteristics; displacement currents; insulating calcium fluoride tunneling currents; nanocrystalline Si/CaF2 multi-quantum well nanostructure traps; nanocrystals; optical charging spectroscopy; Calcium; Electron traps; Nanostructured materials; Nanostructures; Optical materials; Optical superlattices; Physics; Silicon; Spectroscopy; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
Type :
conf
DOI :
10.1109/SMICND.2002.1105814
Filename :
1105814
Link To Document :
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