Title :
Photoluminescence study of strain-compensated GaInNAs/GaAs/GaAs quantum-well structures grown by molecular-beam epitaxy
Author :
Pavelescu, E.-M. ; Jouhti, T. ; Dumitrescu, M. ; Peng, C.S. ; Li, W. ; Kontinnen, J. ; Cimpoca, V. ; Pessa, A.
Author_Institution :
Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland
Abstract :
We report on photoluminescence properties of as-grown and rapid thermally annealed 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures, grown by solid-source molecular-beam epitaxy. Insertion of strain-compensating GaNAs layers in between the GaInNAs well and the GaAs barriers of a GaInNAs/GaAs quantum well shifts the emission towards longer wavelengths, at the expense of line broadening. Luminescence performances of the GaNAs strain-compensated quantum wells were found to be controlled by nitrogen concentration and GaNAs layers width. The presence of the GaNAs barriers sustained a bigger annealing-induced blue shift of the QW photoluminescence spectrum than that met in samples without GaNAs barrier layers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; interface structure; molecular beam epitaxial growth; photoluminescence; rapid thermal annealing; semiconductor growth; semiconductor quantum wells; spectral line broadening; spectral line shift; 1.3 micron; GaAs barriers; GaInNAs well; GaInNAs-GaNAs-GaAs; GaNAs layer width; QW photoluminescence spectrum; annealing-induced blue shift; emission wavelength shift; line broadening; luminescence performances; nitrogen concentration; photoluminescence; rapid thermally annealed QW structures; solid-source molecular-beam epitaxy; strain-compensated GaInNAs/GaNAs/GaAs quantum-well structures; strain-compensating GaNAs layers; Carrier confinement; Gallium arsenide; Luminescence; Molecular beam epitaxial growth; Nitrogen; Photoluminescence; Quantum wells; Rapid thermal annealing; Temperature; Tensile stress;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105825
