DocumentCode :
3852608
Title :
A Monolithically-Integrated Optical Receiver in Standard 45-nm SOI
Author :
Michael Georgas;Jason Orcutt;Rajeev J. Ram;Vladimir Stojanovic
Author_Institution :
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge
Volume :
47
Issue :
7
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
1693
Lastpage :
1702
Abstract :
Integrated photonics has emerged as an I/O technology that can meet the throughput demands of future many-core processors. Taking advantage of the low capacitance environment provided by monolithic integration, we developed an integrating receiver front-end built directly into a clocked comparator, achieving high sensitivity and energy-efficiency. A simple model of the receiver provides intuition on the effects of wiring and photodiode capacitance, and leads to a photodiode-splitting technique enabling improved sensitivity at higher data rates. The receiver is characterized in situ and shown to operate with μA-sensitivity at 3.5 Gb/s with a power consumption of 180 μ W (52 fJ/bit) and area of 108 μm2 . This work demonstrates that photonics and electronics can be jointly integrated in a standard 45-nm SOI process.
Keywords :
"Capacitance","Optical receivers","Sensitivity","Clocks","Optical sensors","Bandwidth"
Journal_Title :
IEEE Journal of Solid-State Circuits
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2012.2191684
Filename :
6203614
Link To Document :
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