Hall effect study of YBCO HTS films implanted with phosphorous ions

The inhibition of superconductivity in YBCO HTS films using ion implantation has shown itself to be a promising method for patterning HTS films for use in the fabrication of electronic devices. In this work we have shown that the carrier concentrations in YBCO films may be reduced in a controlled fashion using ion implantation, while retaining the superconducting properties of the films. YBCO films 100 to 140 nm thick commercially grown on SrTiO/sub 3/, were implanted with phosphorus ions, at 100 keV, with doses ranging from 1/spl times/10/sup 14//cm/sup 2/ to 1/spl times/10/sup 15//cm/sup 2/. Superconducting specimens with carrier concentrations ranging from /spl sim/10x10/sup 21//cm/sup 3/, for an unimplanted sample, to /spl sim/7/spl times/10/sup 20//cm/sup 3/ for a sample receiving an implant dose of 1/spl times/10/sup 15//cm/sup 2/, were obtained. The carrier concentrations were determined from Hall effect measurements.