Polysilicon thin layers for photovoltaic applications

Thin layers of polycrystalline silicon as the optically absorbing material for photovoltaic devices represents a promising way for simultaneously achieving good performances and low manufacturing cost. In this paper, the preparation of polysilicon thin layers together with technological process for a p-i-n type photovoltaic cell fabrication are presented. The crystalline structure, surface morphology and optical properties were investigated by AFM technique, X-ray diffraction and spectrophotometer measurements.