Thickness dependent properties of CdS/CdTe hetero-photo-elements

Author

Potlog, T. ; Sites, J. ; Gashin, P. ; Ghimpu, L.

Author_Institution

Dept. of Phys., Moldova State Univ., Chisinau, MD, USA

Volume

1

fYear

2002

fDate

2002

Firstpage

223

Abstract

The analysis of the I-V characteristics of a CdS/CdTe heterojunction shows the strong influence of the time of deposition of CdTe on the photo-electrical parameters. The best parameters with no antireflection coating, J_sc=24.8 mA/cm², V_oc=0.82 V, FF=0.48, η=9.76% are obtained in the case when time of deposition of CdTe is 3.5 min. The photoresponse decreases with increasing CdTe thickness. The photosensitivity covers the wavelength range from 0.50 μm to 0.86 μm for all cells. The most efficient carrier generation and collection is for the structure with the time of the CdTe layer deposition of 3.5 min.

Keywords

II-VI semiconductors; cadmium compounds; electric current; photoconductivity; photoelectric devices; semiconductor growth; sublimation; vapour deposited coatings; 0.5 to 0.86 micron; 0.82 V; 3.5 min; CdS-CdTe; CdS/CdTe hetero-photo-elements; CdS/CdTe heterojunction; CdTe deposition time; CdTe thickness; I-V characteristics; antireflection coating; carrier collection; carrier generation; close space sublimation method; photo-electrical parameters; photoresponse; photosensitivity wavelength range; thickness dependent properties; Annealing; Conductivity; Grain boundaries; III-V semiconductor materials; Lighting; Ohmic contacts; Physics; Radiative recombination; Short circuit currents; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105836

Filename

1105836