• DocumentCode
    3853121
  • Title

    Impact of low gamma radiation dose on electrical trap related effects in AlGaN/GaN HEMTs

  • Author

    F. Berthet;Y. Guhel;B. Boudart;H. Gualous;J.L. Trolet;M. Piccione;C. Gaquiere

  • Author_Institution
    LUSAC, Universite de Caen Basse-Normandie, Site Universitaire, France
  • Volume
    48
  • Issue
    17
  • fYear
    2012
  • fDate
    8/16/2012 12:00:00 AM
  • Firstpage
    1078
  • Lastpage
    1079
  • Abstract
    Presented is an original method to decrease electrical trap effects in AlGaN/GaN HEMTs by using a low gamma radiation dose. In fact, a partial annihilation of trap related effects on static electrical characteristics has been observed when the devices are irradiated with a gamma radiation dose of 4 krad.
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.1966
  • Filename
    6272462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3853121