• DocumentCode
    3853185
  • Title

    High-power integrated ultrafast semiconductor disk laser: Multi-Watt 10 GHz pulse generation

  • Author

    V.J. Wittwer;M. Mangold;M. Hoffmann;O.D. Sieber;M. Golling;T. Sudmeyer;U. Keller

  • Author_Institution
    Department of Physics, Institute for Quantum Electronics, ETH Zurich, Zurich 8093, Switzerland
  • Volume
    48
  • Issue
    18
  • fYear
    2012
  • fDate
    8/30/2012 12:00:00 AM
  • Firstpage
    1144
  • Lastpage
    1145
  • Abstract
    Presented is an optically pumped modelocked integrated external-cavity surface emitting laser (MIXSEL) with a pulse repetition rate of 10 GHz, generating picosecond pulses at 2.4 W average output power at a centre wavelength of 963 nm. The MIXSEL structure integrates both the absorber and the gain layers within the same wafer. The saturable absorber is a single layer of self-assembled InAs quantum dots (QD) and the gain is obtained with seven InGaAs quantum wells. It is shown that the picosecond pulse duration is limited by the slow recovery time of the integrated QD saturable absorber.
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.2405
  • Filename
    6294566