DocumentCode
3853185
Title
High-power integrated ultrafast semiconductor disk laser: Multi-Watt 10 GHz pulse generation
Author
V.J. Wittwer;M. Mangold;M. Hoffmann;O.D. Sieber;M. Golling;T. Sudmeyer;U. Keller
Author_Institution
Department of Physics, Institute for Quantum Electronics, ETH Zurich, Zurich 8093, Switzerland
Volume
48
Issue
18
fYear
2012
fDate
8/30/2012 12:00:00 AM
Firstpage
1144
Lastpage
1145
Abstract
Presented is an optically pumped modelocked integrated external-cavity surface emitting laser (MIXSEL) with a pulse repetition rate of 10 GHz, generating picosecond pulses at 2.4 W average output power at a centre wavelength of 963 nm. The MIXSEL structure integrates both the absorber and the gain layers within the same wafer. The saturable absorber is a single layer of self-assembled InAs quantum dots (QD) and the gain is obtained with seven InGaAs quantum wells. It is shown that the picosecond pulse duration is limited by the slow recovery time of the integrated QD saturable absorber.
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2012.2405
Filename
6294566
Link To Document