Optimal gate drive circuit design for ZVS operation of SiC-JFET devices

The use of resonant converters in high-frequency and high-efficiency power converters is widespread. Recent developments in wide bandgap materials, such as silicon carbide and gallium nitride, and their commercial availability, are boosting their use in power converters. Proposed is a reduced component-count gate drive circuit for the zero voltage switching operation of resonant converters featuring SiC JFETs and its design procedure is proposed. The trade-off between on-state losses and driver activation losses is detailed, reaching a point of maximum device efficiency. The proposal is experimentally verified using a resonant converter applied to domestic induction heating.