Large signal microwave performances of high-k metal gate 28 nm CMOS technology

A report is presented on the first microwave power performances of high-k metal gate 28 nm CMOS devices. Measurements were performed in a large signal operation based on a nonlinear vector network analyser associated with a passive tuner at 10GHz. First, the behaviour of these high-k metal gate 28 nm CMOS devices was analysed in A-class operation. Then, the maximum withstandable drain voltage (before device destruction) was determined for various topologies. Finally, a comparison between this new technology and the usual CMOS 45 nm technology was exposed.