• DocumentCode
    385743
  • Title

    Direct-Coupled GaAs Monolithic IC Amplifiers

  • Author

    Hori, Shigekazu ; Kamei, Kiyoho ; Tatematsu, Mikio ; Chigira, Toshio ; Ishimura, Hiroshi ; Okano, Susumu

  • Volume
    82
  • Issue
    1
  • fYear
    1982
  • fDate
    30103
  • Firstpage
    16
  • Lastpage
    19
  • Abstract
    A two-stage GaAs FET monolithic amplifier has been developed that exhibits a noise figure of 2dB and a gain of 20dB at frequencies from 0.3 to 1.5 GHz. The FET gate width is optimized to 1mm to lower the noise figure for a 50 Omega signal source impedance. A direct-coupled scheme is used for chip size reduction. All the circuit elements such as FETs, Schottky diodes and resistors are fabricated by using selective ion-implantation for realizing a planar structure.
  • Keywords
    FETs; Fabrication; Gallium arsenide; Impedance; MMICs; Monolithic integrated circuits; Noise figure; Radiofrequency amplifiers; Resistors; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1982.1112171
  • Filename
    1112171
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=385743