DocumentCode :
385746
Title :
Heterodyne Experiments from Millimeter Wave to Optical Frequencies Using GaAs MESFETs Above fT*
Author :
Chu, A. ; Fetterman, H.R. ; Peck, D.D. ; Tannenwald, P.E.
Volume :
82
Issue :
1
fYear :
1982
fDate :
30103
Firstpage :
25
Lastpage :
27
Abstract :
Response of GaAs FETs in mm-wave and optical heterodyne experiments has been obtained at frequencies above the frequency of unity current gain, fT. In the mixing of two visible lasers, beat frequencies as high as 300 GHz have been observed. These high IFs were down converted to microwave frequencies by radiatively coupling mm-wave local oscillators into the gate region.
Keywords :
FETs; Frequency; Gallium arsenide; Laser stability; Laser tuning; MESFETs; Millimeter wave technology; Optical mixing; Optical sensors; Pump lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
Type :
conf
DOI :
10.1109/MCS.1982.1112174
Filename :
1112174
Link To Document :
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