DocumentCode
385746
Title
Heterodyne Experiments from Millimeter Wave to Optical Frequencies Using GaAs MESFETs Above fT*
Author
Chu, A. ; Fetterman, H.R. ; Peck, D.D. ; Tannenwald, P.E.
Volume
82
Issue
1
fYear
1982
fDate
30103
Firstpage
25
Lastpage
27
Abstract
Response of GaAs FETs in mm-wave and optical heterodyne experiments has been obtained at frequencies above the frequency of unity current gain, fT. In the mixing of two visible lasers, beat frequencies as high as 300 GHz have been observed. These high IFs were down converted to microwave frequencies by radiatively coupling mm-wave local oscillators into the gate region.
Keywords
FETs; Frequency; Gallium arsenide; Laser stability; Laser tuning; MESFETs; Millimeter wave technology; Optical mixing; Optical sensors; Pump lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1982.1112174
Filename
1112174
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