DocumentCode
385769
Title
Monolithic Gallium Arsenide I-Q Demodulator
Author
O´Neil, V.P. ; Ryan, C. ; Weitzel, C.
Volume
84
Issue
1
fYear
1984
fDate
30803
Firstpage
14
Lastpage
18
Abstract
The monolithic gallium arsenide demodulator described herein demodulates the in-phase (I) and quadrature (Q) components of two signal channels on carriers identical in frequency but in quadrature phase relationships. The present demodulator is shown to be closely matched because of close matching of component parameters achieved by fabricating the entire demodulator on a single gallium arsenide chip. The demodulator can be developed to, replace diode ring demodulators to obtain the following advantages.
Keywords
Circuits; Demodulation; Etching; FETs; Frequency; Gallium arsenide; Government; Research and development; Resistors; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1984.1113618
Filename
1113618
Link To Document