DocumentCode
385770
Title
Monolithic GaAs Dual-Gate FET Variable Power Amplifier Module
Author
Saunier, P. ; Tserng, H.Q. ; Kim, B. ; Westphal, G.H.
Volume
85
Issue
1
fYear
1985
fDate
31199
Firstpage
1
Lastpage
3
Abstract
The design, fabrication, and microwave performance of a monolithic four-stage GaAs dual-gate FET amplifier are described. A linear gain of 23 dB with 250 mW output power has been measured at 18 GHz. The highest power obtained was 500 mW with 21 dB gain at the same frequency. By varying the second gate bias voltage, a dynamic gain control range of more than 60 dB has been observed. The chip size is 6.45mm x 2.1mm x 0.1mm.
Keywords
Fabrication; Frequency; Gain measurement; Gallium arsenide; Microwave FETs; Microwave amplifiers; Power amplifiers; Power generation; Power measurement; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1985.1113626
Filename
1113626
Link To Document