Title :
A 2-W Ku-Band Monolithic GaAs FET Amplifier
Author :
Macksey, H.M. ; Tserng, H.Q. ; Shih, H.D.
Abstract :
A monolithic three-stage Ku-band GaAs FET power amplifier has been designed, fabricated. Epitaxial layers are grown by molecular beam epitaxy FETs have a source overlay geometry with the n+ ledge channel structure. The amplifiers have up to 2 W output power at 16.5 GHz with 12 dB gain, 20% efficiency.
Keywords :
Bridge circuits; Broadband amplifiers; Distributed parameter circuits; Gallium arsenide; Geometry; High power amplifiers; Microwave FETs; Power amplifiers; Power generation; Power transmission lines;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1985.1113631
