• DocumentCode
    385785
  • Title

    A 2 Gb/s Throughput GaAs Digital Time Switch LSI Using LSCFL

  • Author

    Takada, Tohru ; Shimazu, Yoshihiro ; Yamasaki, Kimiyoshi ; Togashi, Minoru ; Hoshikawa, Keigo ; Idda, Masao

  • Volume
    85
  • Issue
    1
  • fYear
    1985
  • fDate
    31199
  • Firstpage
    22
  • Lastpage
    26
  • Abstract
    A GaAs four channel digital time switch having a 2.0 Gb/s throughput is developed. Low Power Source Coupled FET Logic (LSCFL) and 0.55 µm gate length buried p-layer SAINT-FETs are applied. The switch includes 1176 devices (FETs, diodes, and resistors). The 75 % fabrication yield is attained using dislocation free wafers.
  • Keywords
    Circuits; Communication switching; FETs; Fabrication; Frequency conversion; Gallium arsenide; Large scale integration; Logic devices; Switches; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1985.1113649
  • Filename
    1113649
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=385785