DocumentCode :
385790
Title :
A High Gain, Monolithic Distributed Amplifier Using Cascode Active Elements
Author :
LaRue, R. ; Bandy, S. ; Zdasiuk, G.
Volume :
86
Issue :
1
fYear :
1986
fDate :
31564
Firstpage :
23
Lastpage :
26
Abstract :
A novel, monolithic, distributed amplifier has achieved a record gain of over 10 dB from 2-18 GHz. The design utilizes five quarter-micron gate length, cascode connected, FETs on epitaxial material . Circuit simulations predict over 10 dB gain from 2-30 GHz for an amplifier with seven active elements. Novel features of the design, fabrication and testing are discussed.
Keywords :
Bandwidth; Circuit simulation; Circuit testing; Distributed amplifiers; FETs; Fabrication; Gain; Gallium arsenide; Laboratories; Noise figure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
Type :
conf
DOI :
10.1109/MCS.1986.1114473
Filename :
1114473
Link To Document :
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