Title :
30 GHz Monolithic Balanced Mixers Using an Ion-Implanted FET-Compatible 3-Inch GaAs Wafer Process Technology
Abstract :
An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated, tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.
Keywords :
Cutoff frequency; FETs; Gallium arsenide; Implants; Lithography; Mixers; Ohmic contacts; Schottky barriers; Schottky diodes; Surface resistance;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1986.1114477
