DocumentCode
385797
Title
Fabrication of Low Power, High-Speed GaAs LSI On-Board Baseband Switching Matrix
Author
Yamamoto, Ryuichiro ; Ueda, Kazuyoshi ; Nagao, Hiroyuki ; Morimura, Tadaaki ; Eguchi, Iwao ; Kudoh, Masahiko ; Kinuhata, Kouji ; Nuspl, Peter
Volume
86
Issue
1
fYear
1986
fDate
31564
Firstpage
65
Lastpage
69
Abstract
A GaAs LSI On-Board Baseband Switching Matrix (BSM) for use in satellite communications for time-division multiple access (TDMA) system, has been designed and fabricated by using low dissipated Buffered-FET-Logic(BFL) with one level- shifting diode with the FET threshold voltage of about -0.5 V. For a 120 Mbit/s rate traffic signal to be used for TDMA , complete connectivity was confirmed for any possible switching pattern with a fast rise/fall time of about 1 ns at a power dissipation of 160 mW. The switch size is 16x4, expandable up to 16x16 by interbonding.
Keywords
Baseband; Communication switching; Diodes; Fabrication; Gallium arsenide; Large scale integration; Satellite communication; Signal design; Switches; Time division multiple access;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1986.1114481
Filename
1114481
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