DocumentCode
385805
Title
W-band GaAs MESFET Frequency Doubler
Author
Geddes, J. ; Sokolov, V. ; Contolatis, A.
Volume
87
Issue
1
fYear
1987
fDate
31929
Firstpage
7
Lastpage
10
Abstract
A monolithic W-band frequency doubler has been developed using submicron gate length GaAs MESFETs fabricated on ion implanted material. The frequency doubler provides a power output of over 4.0 mW at 94 GHz with an input drive of 70 mW at 47 GHz. To of a MESFET our knowledge this is the first report frequency doubler operating at W-band.
Keywords
Circuit simulation; FETs; Frequency; Gallium arsenide; HEMTs; Impedance matching; MESFETs; MODFETs; Oscillators; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1987.1114504
Filename
1114504
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