• DocumentCode
    385806
  • Title

    Millimeter-Wave Monolithic Gunn Oscillators

  • Author

    Chen, J.C. ; Pao, C.K. ; Wong, D.W.

  • Volume
    87
  • Issue
    1
  • fYear
    1987
  • fDate
    31929
  • Firstpage
    11
  • Lastpage
    13
  • Abstract
    A millimeter-wave monolithic GaAs Gunn oscillator has been designed, fabricated and tested. Epitaxial layers were grown by conventional vapor phase epitaxy on semi-insulating substrate. The matching circuit and bias circuitry were monolithically fabricated on the same chip as the active device. With no external tuning, the oscillator chip delivers 1 mW and 1.5 mW at 68.4 GHz and 44.9 GHz, respectively. The best performance was achieved at 41.6 GHz with 4 mW output power. This is the first fully monolithic Gunn oscillator ever reported at these frequencies.
  • Keywords
    Circuit optimization; Circuit testing; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gunn devices; Millimeter wave circuits; Oscillators; Substrates; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1987.1114505
  • Filename
    1114505
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=385806