• DocumentCode
    385984
  • Title

    Simple Analytical Modeling of GaAs MESFET Nonlinear Behavior

  • Author

    Kawai, T. ; Rosenbaum, F.J.

  • Volume
    1
  • fYear
    1987
  • fDate
    May 9 1975-June 11 1987
  • Firstpage
    103
  • Lastpage
    106
  • Abstract
    A simple resistive model for the GaAs MESFET which accounts for many of its nonlinear properties is proposed. A new DC characterization approach is suggested and used to predict the performance of a single-stage feedback amplifier. Good agreement is obtained between theory and experiment.
  • Keywords
    Analytical models; FETs; Feedback amplifiers; Gallium arsenide; Harmonic analysis; MESFETs; Microwave devices; Performance analysis; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1987 IEEE MTT-S International
  • Conference_Location
    Palo Alto, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1987.1132336
  • Filename
    1132336
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=385984