Title :
Simple Analytical Modeling of GaAs MESFET Nonlinear Behavior
Author :
Kawai, T. ; Rosenbaum, F.J.
fDate :
May 9 1975-June 11 1987
Abstract :
A simple resistive model for the GaAs MESFET which accounts for many of its nonlinear properties is proposed. A new DC characterization approach is suggested and used to predict the performance of a single-stage feedback amplifier. Good agreement is obtained between theory and experiment.
Keywords :
Analytical models; FETs; Feedback amplifiers; Gallium arsenide; Harmonic analysis; MESFETs; Microwave devices; Performance analysis; Transconductance; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132336
