DocumentCode
385985
Title
Large-Signal Modeling of GaAs Power FET Amplifiers
Author
Khatibzadeh, M.A. ; Trew, R.J. ; Bahl, I.J.
Volume
1
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
107
Lastpage
110
Abstract
A new large-signal, analytic model for the GaAs MESFET is used in conjunction with the modified harmonic balance technique to study the performance of a monolithic, C-band power FET amplifier. The new device model is physics based and requires device, material and bias data as input. The model includes the effects of non-uniform doping profiles and charge accumulation in the channel. Both small- and large-signal parameters calculated with the model are in good agreement with measured data. The power and harmonic performance of the complete amplifier are also in good agreement with measured data.
Keywords
Doping profiles; FETs; Gallium arsenide; Harmonic analysis; MESFETs; Performance analysis; Physics; Power amplifiers; Power system harmonics; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132337
Filename
1132337
Link To Document