DocumentCode
385994
Title
A High Gain GaAs MESFET Frequency Quadruple
Author
Camargo, E. ; Correpa, F.S.
Volume
1
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
177
Lastpage
180
Abstract
This paper presents a comprehensive analysis carried out on a frequency quadrupler from 1 to 4 GHz using a 1µm dual gate GaAs MESFET. Two different circuit options are proposed, namely with and without feedback. They were constructed on soft substrates and the preliminary microwave results are a + 10 mW output power with a 8.5 dB associated multiplication gain and 6% DC-to-RF power efficiency.
Keywords
Feedback circuits; Frequency; Gain; Gallium arsenide; Impedance; MESFETs; Nominations and elections; Output feedback; Power generation; Power harmonic filters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132356
Filename
1132356
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