DocumentCode :
386037
Title :
Recent Advances in the Modelling and Performance of Millimeter Wave InP and GaAs VCO´s and Oscillators
Author :
Cohen, L.O. ; Sard, E.
Volume :
1
fYear :
1987
fDate :
May 9 1975-June 11 1987
Firstpage :
429
Lastpage :
432
Abstract :
The use of a lumped element circuit form has provided a new means to model and quantify the equivalent circuit parameters of InP and GaAs Gunn VCO´s and oscillators under large signal conditions. The modelling has resulted in excellent agreement between calculated and measured performance of wide-band VCO´s and oscillators in the 26 to 60 GHz frequency range. New insights into device operation and performance will be presented.
Keywords :
Capacitors; Diodes; Frequency measurement; Gallium arsenide; Gunn devices; Indium phosphide; Millimeter wave circuits; Millimeter wave measurements; Varactors; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1987.1132423
Filename :
1132423
Link To Document :
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