Title :
35 GHz Low Noise HEMT Amplifier
Author :
Schellenberg, J.M. ; Maher, M.V. ; Wang, S.K. ; Wang, K.G. ; Yu, K.K.
fDate :
May 9 1975-June 11 1987
Abstract :
A low noise HEMT amplifier has been developed for operation at 35 GHz. The three-stage amplifier exhibits a noise figure of 3.1 dB with an associated gain of 17.4 +- 0.4 dB across the 34.25 to 35.75 GHz frequency band.
Keywords :
Circuits; Electron mobility; Frequency; Gain; Gallium arsenide; HEMTs; Low-noise amplifiers; MOCVD; Noise figure; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132426
