Title :
Spin polarized quantum dot light emitters
Author :
Bhattacharya, Pallab ; Ghosh, Siddhartha
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Summary form only given. In this paper, we describe the growth of (In,Mn)As self-organized quantum dots, or "diluted magnetic quantum dots" (DMQD), with Mn content up to 5%, at a substrate temperature of 285°C. The ferromagnetic properties of the quantum dot layers have been studied. A value of Tc as high as 150 K is measured in as-grown (In,Mn)As QD layers with 5% Mn. The characteristics of spin-polarized quantum dot surface emitting LEDs, using DMS or DMQD layers as spin aligners are described.
Keywords :
Curie temperature; III-V semiconductors; electroluminescence; electron spin polarisation; ferromagnetic materials; indium compounds; interface magnetism; light emitting diodes; manganese compounds; molecular beam epitaxial growth; semiconductor quantum dots; semimagnetic semiconductors; (InMn)As self-organized quantum dots; 150 K; 285 C; Curie temperature; GaAs; In0.4Ga0.6As-GaAs; InMnAs; InMnAs spin polarized quantum dot light emitters; [001] GaAs substrates; diluted magnetic quantum dots; diluted magnetic semiconductors; electroluminescence spectra; ferromagnetic properties; nonmagnetic matrix; self-organized quantum dots; solid-source MBE; spin aligners; spin-polarized quantum dot surface emitting LEDs; Gallium arsenide; Light emitting diodes; Magnetic flux; Magnetization; Optical polarization; Quantum dots; Spin polarized transport; Substrates; Temperature; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1133897
