Spin polarized quantum dot light emitters

Author

Bhattacharya, Pallab ; Ghosh, Siddhartha

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

1

fYear

2002

fDate

2002

Firstpage

19

Abstract

Summary form only given. In this paper, we describe the growth of (In,Mn)As self-organized quantum dots, or "diluted magnetic quantum dots" (DMQD), with Mn content up to 5%, at a substrate temperature of 285°C. The ferromagnetic properties of the quantum dot layers have been studied. A value of T_c as high as 150 K is measured in as-grown (In,Mn)As QD layers with 5% Mn. The characteristics of spin-polarized quantum dot surface emitting LEDs, using DMS or DMQD layers as spin aligners are described.

Keywords

Curie temperature; III-V semiconductors; electroluminescence; electron spin polarisation; ferromagnetic materials; indium compounds; interface magnetism; light emitting diodes; manganese compounds; molecular beam epitaxial growth; semiconductor quantum dots; semimagnetic semiconductors; (InMn)As self-organized quantum dots; 150 K; 285 C; Curie temperature; GaAs; In_0.4Ga_0.6As-GaAs; InMnAs; InMnAs spin polarized quantum dot light emitters; [001] GaAs substrates; diluted magnetic quantum dots; diluted magnetic semiconductors; electroluminescence spectra; ferromagnetic properties; nonmagnetic matrix; self-organized quantum dots; solid-source MBE; spin aligners; spin-polarized quantum dot surface emitting LEDs; Gallium arsenide; Light emitting diodes; Magnetic flux; Magnetization; Optical polarization; Quantum dots; Spin polarized transport; Substrates; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1133897

Filename

1133897