High bandwidth modulation of multiple contact 1.3 micron quantum dot lasers

Author

Wonfor, A. ; Tan, K.T. ; Ribbat, C. ; Bimberg, D. ; Williams, K.A. ; Kang, D.J. ; Blamire, M.G. ; Kovsh, A.R. ; Ustinov, V.M. ; Zhukov, A.E. ; Penty, R.V. ; White, I.H.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

1

fYear

2002

fDate

2002

Firstpage

21

Abstract

By forming twin contacts on a 1300 nm quantum dot laser, a small signal modulation bandwidth of 4.6 GHz is achieved. This bandwidth value is 2.3 times greater than that for the equivalent single contact device. The quantum dot lasers studied are 800 μm long with 8 μm wide ridge guides and 5 InAs quantum dot stacks in the active layer.

Keywords

III-V semiconductors; indium compounds; optical modulation; quantum dot lasers; semiconductor quantum dots; 1.3 micron; 4.6 GHz; InAs; InAs quantum dot stacks; absorption regime; dynamic properties; gain regime; high bandwidth modulation; multiple contact 1.3 μm quantum dot lasers; small signal modulation bandwidth; twin contacts; Bandwidth; Etching; Gallium arsenide; Laser theory; Pulse modulation; Quantum dot lasers; Quantum well lasers; Telecommunications; Threshold current; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1133898

Filename

1133898