Title :
InAs/InGaAlAs/InP quantum dash lasers for telecommunication applications
Author :
Gold, D. ; Schwertberger, R. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Technische Phys., Wurzburg Univ., Germany
Abstract :
Summary form only given. In this work 1.55 μm emitting quantum dash (QDash) lasers were realized by self organized growth of InAs quantum dashes on InGaAlAs surfaces lattice matched to InP. The influence of the number of QDash layers in the active region of a laser on device performances was studied. Device results from broad area as well as from cw operating ridge waveguide (RWG) QDash-lasers are presented and discussed in relation to telecommunication applications.
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; indium compounds; quantum dot lasers; self-assembly; semiconductor quantum dots; waveguide lasers; 1.55 micron; InAs-InGaAlAs-InP; InAs/InGaAlAs/InP quantum dash lasers; InP; InP substrates; broad area laser; cw operating ridge waveguide lasers; gas-source molecular beam epitaxy; quantum dot layers; self organized growth; self-assembled quantum dash lasers; telecommunication applications; Chemical lasers; Indium phosphide; Laser applications; Optical materials; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1133900
