Title :
Modulation characteristics of high-speed tunnel injection In0.4Ga0.6As quantum dot lasers
Author :
Pradhan, S. ; Ghosh, S. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Summary form only given. We have recently demonstrated higher small-signal modulation bandwidth (15 GHz) at room temperature in single mode InGaAs/GaAs quantum dot lasers in which electrons are injected to the lasing ground state of the dots by tunneling. We report here the room-temperature small- and large-signal modulation characteristics of tunnel injection quantum dot lasers. The devices are characterized by high quantum efficiency, very large modulation bandwidth and very small chirp and α-factor. The tunnel injection quantum dot laser heterostructures were grown by molecular beam epitaxy.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; quantum dot lasers; semiconductor quantum dots; tunnelling; waveguide lasers; α-factor; Auger recombination; In0.4Ga0.6As; high quantum efficiency; high-speed tunnel injection In0.4Ga0.6As quantum dot lasers; lasing ground state; linewidth enhancement factor; modulation characteristics; molecular beam epitaxy; room-temperature large-signal modulation characteristics; room-temperature small-signal modulation characteristics; single-mode ridge waveguide lasers; small-signal modulation bandwidth; very small chirp; Bandwidth; Chirp modulation; Electrons; Gallium arsenide; Indium gallium arsenide; Land surface temperature; Laser modes; Quantum dot lasers; Stationary state; Tunneling;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1133901
