Title :
Component design and fabrication of a monolithically integrated polarisation insensitive 2×2 optical packet switch in InP
Author :
Qiu, B.C. ; Ternent, G. ; Maldonado, V. Loyo ; McDougall, S.D. ; Marsh, J.H.
Author_Institution :
Intense Photonics Ltd., High Blantyre, UK
Abstract :
Details of the design and successful fabrication of polarisation insensitive monolithic 2×2 crosspoint switches on InP are presented, which include SOAs, electroabsorption modulators (EAMs), passive multimode interference (MMI) couplers and passive waveguides all fabricated monolithically from a single InP wafer using quantum well intermixing (QWI) processing. Results showing the performance of individual components are presented. Highlights include the achievement of 20 dB extinction ratio EAMs for a 2V swing, and passive waveguide propagation losses below 12 dB cm-1. In addition initial test results will be presented on the switching characteristics of the complete 2×2 crosspoint switch.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; indium compounds; integrated optoelectronics; optical communication equipment; optical couplers; optical design techniques; optical fabrication; optical losses; packet switching; 2 V; EAMs; InP; QWI processing; SOAs; design; electroabsorption modulators; fabrication; monolithically integrated polarisation insensitive optical packet switch; passive MMI couplers; passive multimode interference couplers; passive waveguide propagation losses; passive waveguides; polarisation insensitive monolithic 2x2 crosspoint switches; quantum well intermixing; single InP wafer; switching characteristics; Couplers; Extinction ratio; Indium phosphide; Interference; Optical design; Optical device fabrication; Optical packet switching; Optical polarization; Optical switches; Optical waveguides;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1133908
