The importance of the n-base in p-n-p-n-like structures subjected to dV/dt ramps

A simple yet thorough analysis of physical effects induced in p-n-p-n-like silicon structures by the high rate of the OFF-state forward anode voltage rise (dV/dt) is discussed. The importance of n-base parameters in shaping the faulty triggering of thyristors subjected to dV/dt ramps is clearly demonstrated. The main implications of the findings for thyristor physics and design are also outlined.