Near-diffraction-limited high power diode laser tunable from 895 to 960 nm

Author

Kelemen, M.T. ; Rinner, F. ; Rogg, J. ; Kiefer, R. ; Mikulla, M. ; Weimann, G.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

Volume

1

fYear

2002

fDate

2002

Firstpage

95

Abstract

An external-cavity diode laser including a ridge-waveguide tapered amplifier structure is demonstrated to emit more than 1 W cw. The wavelength is tunable over a 60 nm span centered at 935 nm. The beam quality parameter M² remains below 1.8 for output powers of 1 W over the whole span.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser beams; laser cavity resonators; laser transitions; laser tuning; ridge waveguides; semiconductor lasers; waveguide lasers; 1 W; 895 to 960 nm; 935 nm; InGaAs-AlGaAs; external-cavity diode laser; laser beam quality parameter; near-diffraction-limited high power diode laser; output powers; ridge-waveguide tapered amplifier structure; tunable laser wavelength; Diffraction; Diode lasers; Heat sinks; Laser beams; Laser tuning; Power amplifiers; Power generation; Temperature; Threshold current; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1133935

Filename

1133935