Title :
High-speed operation of GaInNAs edge emitting lasers
Author :
Kondow, M. ; Aoki, M. ; Nakatsuka, S. ; Kitatani, T. ; Tsuji, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
In summary, we show that GaInNAs is a promising material for realizing cost-effective high-speed SQW VCSEL light sources in the 1.3 μm range.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; metropolitan area networks; optical fibre LAN; optical transmitters; quantum well lasers; surface emitting lasers; 1.3 micron; GaInNAs; GaInNAs edge emitting laser; high-speed SQW VCSEL light sources; high-speed operation; light sources; local access networks; metropolitan area networks; optical transmitters; single-quantum-well lasers; Electronic mail; High speed optical techniques; Light sources; Optical materials; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1133976
