Title :
Amplification and laser action in diode-pumped 1.3 μm GaInNAs vertical-cavity structures
Author :
Calvez, S. ; Clark, A.H. ; Hopkins, J.-M. ; Merlin, P. ; Sun, H.D. ; Dawson, M.D. ; Jouhti, T. ; Pessa, M.
Author_Institution :
Inst. of Photonics, Strathclyde Univ., Glasgow, UK
Abstract :
We report fibre-coupled CW diode pumping of 1.3 μm GaInNAs/GaAs vertical-cavity semiconductor optical amplifiers (VCSOAs) and surface emitting lasers (VCSELs). The GaInNAs/GaAs structures are monolithic and are specifically designed for optical pumping, offering advantages in design simplification and added functionality. They allow us to demonstrate up to 1.09 dB of amplification and up to 213 μW of 1297.2 nm laser emission. Both the 980 nm pump light and 1.3 μm signal are coupled to/from the devices by fibers, giving promising systems-compatible demonstrators of GaInNAs-based amplifier technology.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical fibre couplers; optical pumping; quantum well lasers; semiconductor optical amplifiers; surface emitting lasers; 1.3 micron; 1297.2 nm; 213 muW; GaInNAs wells; GaInNAs-GaAs; GaInNAs-based amplifier technology; GaInNAs/GaAs VCSELs; GaInNAs/GaAs VCSOAs; amplification; design simplification; fibre-coupled CW diode pumping; laser action; monolithic structures; optical pumping; surface emitting lasers; vertical-cavity semiconductor optical amplifiers; Fiber lasers; Gallium arsenide; Laser excitation; Optical design; Pump lasers; Semiconductor diodes; Semiconductor lasers; Semiconductor optical amplifiers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1133979
