Amplification and laser action in diode-pumped 1.3 μm GaInNAs vertical-cavity structures

Author

Calvez, S. ; Clark, A.H. ; Hopkins, J.-M. ; Merlin, P. ; Sun, H.D. ; Dawson, M.D. ; Jouhti, T. ; Pessa, M.

Author_Institution

Inst. of Photonics, Strathclyde Univ., Glasgow, UK

Volume

1

fYear

2002

fDate

2002

Firstpage

165

Abstract

We report fibre-coupled CW diode pumping of 1.3 μm GaInNAs/GaAs vertical-cavity semiconductor optical amplifiers (VCSOAs) and surface emitting lasers (VCSELs). The GaInNAs/GaAs structures are monolithic and are specifically designed for optical pumping, offering advantages in design simplification and added functionality. They allow us to demonstrate up to 1.09 dB of amplification and up to 213 μW of 1297.2 nm laser emission. Both the 980 nm pump light and 1.3 μm signal are coupled to/from the devices by fibers, giving promising systems-compatible demonstrators of GaInNAs-based amplifier technology.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical fibre couplers; optical pumping; quantum well lasers; semiconductor optical amplifiers; surface emitting lasers; 1.3 micron; 1297.2 nm; 213 muW; GaInNAs wells; GaInNAs-GaAs; GaInNAs-based amplifier technology; GaInNAs/GaAs VCSELs; GaInNAs/GaAs VCSOAs; amplification; design simplification; fibre-coupled CW diode pumping; laser action; monolithic structures; optical pumping; surface emitting lasers; vertical-cavity semiconductor optical amplifiers; Fiber lasers; Gallium arsenide; Laser excitation; Optical design; Pump lasers; Semiconductor diodes; Semiconductor lasers; Semiconductor optical amplifiers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1133979

Filename

1133979