DocumentCode :
3861492
Title :
Smith chart formulation of performance characterisation for a microwave transistor
Author :
F. Gunes;B.A. Cetiner
Author_Institution :
Electron. & Commun. Eng. Dept., Yildiz Tech. Univ., Istanbul, Turkey
Volume :
145
Issue :
6
fYear :
1998
Firstpage :
419
Lastpage :
428
Abstract :
A scattering parameter theory of the performance characterisation for a bilateral transistor is developed, where mismatching at the input port V/sub i/ is considered as a degree of freedom, and its combination with noise and gain is mapped as circles in the /spl Gamma//sub in/-plane. Stability analysis is based on the unconditionally stable working area (USWA) concept, and all possible USWA configurations are determined by the necessary and sufficient conditions. For each USWA configuration, the constrained maximum stable gain G/sub Tmax/ and its termination couple (T/sub s/, /spl Gamma//sub L/) are expressed as functions of the input VSWR V/sub i/, noise figure F and the scattering S and noise N parameter vectors. Furthermore, the possible incompatible cases for the (F, V/sub i/, G/sub Tmax/) triplets are determined by their necessary and sufficient conditions. A computer program based on this formulation is developed, and cross-relations among the (F, V/sub i/, G/sub Tmax/) triplets have been utilised in obtaining the performance contours at an operating frequency and bias condition.
Journal_Title :
IEE Proceedings - Circuits, Devices and Systems
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:19982389
Filename :
756340
Link To Document :
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