DocumentCode
3861584
Title
Bounds for the number of DC operating points of transistor circuits
Author
J.C. Lagarias;L. Trajkovic
Author_Institution
AT&T Bell Labs., Florham Park, NJ, USA
Volume
46
Issue
10
fYear
1999
Firstpage
1216
Lastpage
1221
Abstract
A transistor circuit consisting of linear positive resistors, q exponential diodes, and p Ebers-Moll modeled bipolar transistors has at most (d+1)/sup d/2/sup d(d-1)/2/ isolated DC operating points where d=q+2p. If, instead of bipolar transistors, the circuit employs Shichman-Hodges modeled field-effect transistors, then it can have at most 2/sup p/ 3/sup 2p/(4p+q+1)/sup q/2/sup q(q-1)/2/ isolated DC operating points. Bounds are also obtained for the number of DC operating points in circuits using other transistor models.
Keywords
"Diodes","Upper bound","MOSFETs","Bipolar transistors","Bipolar transistor circuits","Resistors","Nonlinear equations","FETs","Piecewise linear techniques","Insulation"
Journal_Title
IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications
Publisher
ieee
ISSN
1057-7122
Type
jour
DOI
10.1109/81.795834
Filename
795834
Link To Document