• DocumentCode
    3861584
  • Title

    Bounds for the number of DC operating points of transistor circuits

  • Author

    J.C. Lagarias;L. Trajkovic

  • Author_Institution
    AT&T Bell Labs., Florham Park, NJ, USA
  • Volume
    46
  • Issue
    10
  • fYear
    1999
  • Firstpage
    1216
  • Lastpage
    1221
  • Abstract
    A transistor circuit consisting of linear positive resistors, q exponential diodes, and p Ebers-Moll modeled bipolar transistors has at most (d+1)/sup d/2/sup d(d-1)/2/ isolated DC operating points where d=q+2p. If, instead of bipolar transistors, the circuit employs Shichman-Hodges modeled field-effect transistors, then it can have at most 2/sup p/ 3/sup 2p/(4p+q+1)/sup q/2/sup q(q-1)/2/ isolated DC operating points. Bounds are also obtained for the number of DC operating points in circuits using other transistor models.
  • Keywords
    "Diodes","Upper bound","MOSFETs","Bipolar transistors","Bipolar transistor circuits","Resistors","Nonlinear equations","FETs","Piecewise linear techniques","Insulation"
  • Journal_Title
    IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications
  • Publisher
    ieee
  • ISSN
    1057-7122
  • Type

    jour

  • DOI
    10.1109/81.795834
  • Filename
    795834