DocumentCode
386181
Title
The 40 Gbit/s optical transceiver using monolithic InP and SiGe ICs
Author
Takeyari, Ryoji ; Watanabe, Keiki ; Akashi, Mitsuo
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume
1
fYear
2002
fDate
2002
Firstpage
257
Abstract
A 40-Gbit/s transceiver based on high-performance ICs - using compound semiconductors and SiGe HBTs- was developed. The power consumption and size of the transceiver were reduced by development of electron devices.
Keywords
III-V semiconductors; bipolar integrated circuits; driver circuits; electro-optical modulation; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; modules; multiplexing equipment; optical receivers; optical transmitters; transceivers; 40 Gbit/s; 40 Gbit/s optical transceiver; InP; SiGe; SiGe HBTs; SiGe ICs; compound semiconductors; high-performance ICs; monolithic InP; power consumption; transceiver size reduction; Clocks; Driver circuits; Electron devices; High speed optical techniques; Indium phosphide; Optical modulation; Optical receivers; Optical sensors; Optical transmitters; Transceivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7500-9
Type
conf
DOI
10.1109/LEOS.2002.1134025
Filename
1134025
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