Progress in long wavelength VCSELs

Author

Tan, Michael R T

Author_Institution

Agilent Labs., Palo Alto, CA, USA

Volume

1

fYear

2002

fDate

2002

Firstpage

269

Abstract

Advances in long wavelength VCSEL technology have demonstrated the feasibility of fabricating monolithic long wavelength VCSELs. Several new technologies such as InGaAsN quantum wells, low voltage tunnel junctions and novel DBR mirrors have dramatically improved the performance of long wavelength VCSELs. Common to both technologies is the need to have a manufacturable single mode, polarization locked VCSEL design. It will only be a matter of time before the long wavelength VCSEL will displace both FP and DFB lasers for medium reach applications. For the metro/access market, cost and performance will determine which technology choice will prevail.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser mirrors; metropolitan area networks; optical communication equipment; optical fibre subscriber loops; quantum well lasers; surface emitting lasers; tunnelling; DBR mirrors; InGaAsN; InGaAsN quantum wells; cost; long wavelength VCSEL technology; low voltage tunnel junctions; manufacturable single mode lasers; metro/access market; monolithic long wavelength VCSELs; performance; polarization locked VCSEL design; Costs; Distributed Bragg reflectors; Gallium arsenide; Indium phosphide; MOCVD; Manufacturing; Mirrors; Power generation; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1134031

Filename

1134031