Amorphous silicon back-plane electronics for OLED displays

Author

Nathan, Arokia ; Sakariya, K. ; Kumar, Anil ; Servati, Peyman ; Striakhilev, Denis

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

Volume

1

fYear

2002

fDate

2002

Firstpage

303

Abstract

Summary form only given. In this paper, we present amorphous silicon (a-Si:H) thin film transistor circuits that compensate for material shortcomings such as metastable threshold voltage shift and low mobility, and supply stable and predictable currents to drive organic light emitting diode (OLED) displays. We also discuss vertically stacked pixel architectures that enable high aperture ratio and high on-pixel integration with low parasitic capacitance and leakage current.

Keywords

LED displays; amorphous semiconductors; driver circuits; elemental semiconductors; hydrogen; integrated optoelectronics; leakage currents; organic light emitting diodes; silicon; thin film transistors; OLED displays; Si:H; a-Si:H TFT circuits; back-plane electronics; current-programmed pixel circuits; high aperture ratio; high on-pixel integration; low leakage current; low mobility; low parasitic capacitance; metastable threshold voltage shift; organic light emitting diode displays; pixel driver circuit; stable predictable currents; two TFT voltage-programmed circuit; vertically stacked pixel architectures; Amorphous silicon; Apertures; Circuits; Drives; Flat panel displays; Metastasis; Organic light emitting diodes; Organic materials; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1134048

Filename

1134048