• DocumentCode
    3862137
  • Title

    MRAM with improved magnetic tunnel junction material

  • Author

    H. Kano;K. Bessho;Y. Higo;K. Ohba;M. Hashimoto;T. Mizuguchi;M. Hosomi

  • Author_Institution
    CNC, Sony Corp., Yokohama, Japan
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Abstract
    Summary form only given. Increasing output and decreasing switching field distribution are very important for the development of magnetic tunnel junction (MTJ) materials, in order to achieve a high capacity MRAM. We introduce an amorphous MTJ material with excellent characteristics, which is evaluated through the MRAM/MTJ test element groups (TEG) with a MOS circuit.
  • Keywords
    "Magnetic tunneling","Tunneling magnetoresistance","Magnetic materials","Amorphous magnetic materials","Magnetic anisotropy","Annealing","Voltage","Thermal stability","Perpendicular magnetic anisotropy","Amorphous materials"
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
  • Print_ISBN
    0-7803-7365-0
  • Type

    conf

  • DOI
    10.1109/INTMAG.2002.1000779
  • Filename
    1000779
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3862137