Optical and Electro-Optical Properties of Sn2P2S6

Author

D. Haertle;G. Caimi;M. Jazbinsek;G. Montemezzani;P. Gunter

Author_Institution

Nonlinear Optics Laboratory, Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH Hö

Volume

3

fYear

2005

fDate

6/27/1905 12:00:00 AM

Firstpage

1600

Lastpage

1602

Abstract

We report on the rotation of the indicatrix in the mirror plane and the refractive indices of Sn₂P₂S₆ single crystals in the wavelength range 550-2200 nm at room temperature. Electro-optical properties of Sn₂P₂S₆ were also measured by direct interferometric technique for electric fields applied parallel to the crystallographic x-axis that lies near the spontaneous polarization vector. The room temperature free electro-optical coefficient r₁₁₁ ^T reaches 174plusmn10 pm/V at lambda=633 nm and shows only weak dispersion in the wavelength range between lambdaap0.6... 1.3mum. The temperature dependence of the electro-optical coefficients near the structural phase transition at T_C=65degC is well described by a Curie-Weiss law with a peak value r₁₁₁ ^Tcong4500 pm/V

Keywords

"Tin","Optical refraction","Temperature distribution","Optical interferometry","Optical variables control","Mirrors","Crystals","Electric variables measurement","Wavelength measurement","Crystallography"

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2005. QELS ´05

Print_ISBN

1-55752-796-2

Type

conf

DOI

10.1109/QELS.2005.1549220

Filename

1549220