• DocumentCode
    3862673
  • Title

    Application of the modern semiconductor devices based on the SIC

  • Author

    Drabek Pavel;Hruska Miroslav

  • Author_Institution
    Department of electromechanics and power electronics, West Bohemia University in Pilsen, Pilsen, Czech Republic
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper presents research motivated by industrial demand for using power semiconductor devices based on SiC (silicon carbide). The paper deals with possibility of SiC devices application in traction vehicles. The main attention has been given to the topology of 3-phase voltage-source inverter with free-wheeling SiC Shottky diode and 1-phase traction converter with middle frequency converter for auxiliary drives. The theoretical conclusions and simulation results are compared with experimental measurements on laboratory model with rated power of 2 kVA.
  • Keywords
    "Semiconductor devices","Silicon carbide","Power semiconductor devices","Vehicles","Topology","Voltage","Inverters","Semiconductor diodes","Frequency conversion","Power measurement"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications, 2009. EPE ´09. 13th European Conference on
  • Print_ISBN
    978-1-4244-4432-8
  • Type

    conf

  • Filename
    5279039