DocumentCode
3862673
Title
Application of the modern semiconductor devices based on the SIC
Author
Drabek Pavel;Hruska Miroslav
Author_Institution
Department of electromechanics and power electronics, West Bohemia University in Pilsen, Pilsen, Czech Republic
fYear
2009
Firstpage
1
Lastpage
5
Abstract
This paper presents research motivated by industrial demand for using power semiconductor devices based on SiC (silicon carbide). The paper deals with possibility of SiC devices application in traction vehicles. The main attention has been given to the topology of 3-phase voltage-source inverter with free-wheeling SiC Shottky diode and 1-phase traction converter with middle frequency converter for auxiliary drives. The theoretical conclusions and simulation results are compared with experimental measurements on laboratory model with rated power of 2 kVA.
Keywords
"Semiconductor devices","Silicon carbide","Power semiconductor devices","Vehicles","Topology","Voltage","Inverters","Semiconductor diodes","Frequency conversion","Power measurement"
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2009. EPE ´09. 13th European Conference on
Print_ISBN
978-1-4244-4432-8
Type
conf
Filename
5279039
Link To Document