6 inch GaN on Si power devices for wireless charged health care system applications

The normally-off GaN on Si and GaN on SiC power devices including rectifier diode and HEMT were demonstrated in this study. GaN diode rectifiers was designed to be applied in a magnetic resonant coupling (MRC) for wireless power transfer system. The MRC is desired to operate at a high frequency in the Industry-Science-Medical (ISM) band such as 13.56 MHz. For reducing the power switching loss, the specific R_ON needs to be optimized. In addition, normally-off GaN HEMT was an important active device for this system. To achieve this property, the cascade architecture and p-GaN gate design were also proposed.