DocumentCode :
3862877
Title :
Gbps THz external modulator based on high electron mobility transistors-metamaterials
Author :
Shen Qiao;Yaxin Zhang;Shenggang Liu
Author_Institution :
Terahertz Research Center, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, 610054 China
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
Utilizing THz wave to transmit data for communication and imaging places high demands in phase and amplitude modulation. In this paper we combined a metamaterial array with HEMT structure to form an ultrafast electronic grid-controlled THz modulator. By controlling the carrier concentration of 2DEG, a resonant mode conversion between two different dipolar resonances has been realized. In the real-time dynamic test, this THz modulator achieved 1 GHz modulation speed with 85% modulation depth and 1.26 rad phase shift. It could provide an alternate way to achieve effective and ultra-fast active devices in THz wireless communication system.
Keywords :
"HEMTs","Phase modulation","Metamaterials","Wires","MODFETs","Frequency modulation"
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
ISSN :
2162-2027
Electronic_ISBN :
2162-2035
Type :
conf
DOI :
10.1109/IRMMW-THz.2015.7327657
Filename :
7327657
Link To Document :
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