• DocumentCode
    3862877
  • Title

    Gbps THz external modulator based on high electron mobility transistors-metamaterials

  • Author

    Shen Qiao;Yaxin Zhang;Shenggang Liu

  • Author_Institution
    Terahertz Research Center, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, 610054 China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Utilizing THz wave to transmit data for communication and imaging places high demands in phase and amplitude modulation. In this paper we combined a metamaterial array with HEMT structure to form an ultrafast electronic grid-controlled THz modulator. By controlling the carrier concentration of 2DEG, a resonant mode conversion between two different dipolar resonances has been realized. In the real-time dynamic test, this THz modulator achieved 1 GHz modulation speed with 85% modulation depth and 1.26 rad phase shift. It could provide an alternate way to achieve effective and ultra-fast active devices in THz wireless communication system.
  • Keywords
    "HEMTs","Phase modulation","Metamaterials","Wires","MODFETs","Frequency modulation"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
  • ISSN
    2162-2027
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2015.7327657
  • Filename
    7327657